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參數(shù)資料
| 型號： | 2SK3571 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 82K |
| 代理商： | 2SK3571 |
Data Sheet D16257EJ2V0DS
2
2SK3571
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 24 A
11
S
R
DS(on)1
V
GS
= 10 V, I
D
= 24 A
7.0
9.0
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
10
16
m
Input Capacitance
C
iss
V
DS
= 10 V
1100
pF
Output Capacitance
C
oss
V
GS
= 0 V
450
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
160
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 24 A
13
ns
Rise Time
t
r
V
GS
= 10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
40
ns
Fall Time
t
f
9
ns
Total Gate Charge
Q
G
V
DD
= 16 V
21
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
4.2
nC
Gate to Drain Charge
Q
GD
I
D
= 48 A
5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 48 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 48 A, V
GS
= 0 V
41
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
27
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
#
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| 2SK3571-S | SWITCHING N-CHANNEL POWER MOSFET |
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|---|---|
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