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參數資料
| 型號： | 2SK364-BL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | 2-5F1D, SC-43, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 153K |
| 代理商： | 2SK364-BL |
2SK364
2003-03-25
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK364
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 40 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA)
Complementary to 2SJ104
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
2.6
20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
12
28
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
30
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
6
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
50
W
Note 1: IDSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA
Note 2: Condition of the typical value IDSS = 5 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
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PDF描述 |
|---|---|
| 2SK365-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET |
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| 2SK3651-01R | 25 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK364-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK364-V(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3651-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3653(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
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