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參數資料
| 型號： | 2SK3640-ZK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 19000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | MP-3ZK, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 164K |
| 代理商： | 2SK3640-ZK |
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MOS FIELD EFFECT TRANSISTOR
2SK3640
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15968EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3640-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3640 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 21 m
MAX. (VGS = 10 V, ID = 9 A)
RDS(on)2 = 40 m
MAX. (VGS = 4.5 V, ID = 9 A)
Low Ciss: Ciss = 570 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±19
A
Drain Current (pulse)
Note1
ID(pulse)
±76
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
10
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25
, L = 100
H, VGS = 20 → 0 V
(TO-252)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3645-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3648-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK364-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK364-V(F) | 制造商:Toshiba 功能描述:Bulk |
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