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參數(shù)資料
型號: 2SK3760
廠商: 美麗微半導(dǎo)體有限公司
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOS6)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型(喝醉MOS6)
文件頁數(shù): 1/6頁
文件大小: 84K
代理商: 2SK3760
2SK3760
2004-02-26
1
10.5max
10.5 max
3.84 0.2
6
2
1
1
1.5 max
3
4.7 max
1.3
0.45
2.7
1 2 3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS
2SK3760
)
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 1.7
High forward transfer admittance: |Y
fs
| = 2.5S (typ.)
Low leakage current: I
DSS
= 100
Enhancement-mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
(typ.)
A (V
DS
= 600 V )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
V
DGR
V
GSS
I
D
600
V
Drain-gate voltage (R
GS
=
20 k
)
600
V
Gate-source voltage
±
30
V
DC
(Note 1)
3.5
Drain current
Pulse (t
=
1 ms)
(Note 1)
I
DP
14
A
Drain power dissipation (Tc
=
25°C)
P
D
60
W
Single pulse avalanche energy
(Note 2)
E
AS
6.3
mJ
Avalanche current
I
AR
3.5
A
Repetitive avalanche energy (Note 3)
E
AR
6
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.08
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C(initial), L
=
0.9 mH, I
AR
=
3.5 A, R
G
=
25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
unit
1
3
2
Weight : 2.0g(typ.)
J EDEC
J EITA
TOSHIBA
TO-220AB
SC-46
1. Gate
2. Drain(HEAT SINK)
3. Source
2.54
3
1
1
6
1.3
2.7
0.81
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