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參數資料
| 型號： | 2SK3869 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 225K |
| 代理商： | 2SK3869 |
2SK3869
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3869
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.55 (typ.)
High forward transfer admittance: |Yfs| = 5.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 450 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
40
A
Drain power dissipation (Tc
= 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
222
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3869(Q) | 制造商:Toshiba 功能描述:Nch 450V 10A 0.68@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 450V 10A TO220SIS |
| 2SK3875-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power, N-Ch, VDSS 900V, RDS(ON) 0.79Ohm, ID 13A, TO-247, PD 355W, VGS +/-30V |
| 2SK3875-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3876-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3878(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.3@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 9A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 9A 900V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 9A, 900V, TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 900V, 9A, SC-65; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; No. of Pins:3 ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 900V 9A TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN |
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