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參數(shù)資料
| 型號(hào)： | 2SK4164 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 61K |
| 代理商： | 2SK4164 |
2SK4164
No. A0736-1/4
Features
Low ON-resistance.
Load switching applications.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
mJ
A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :
*
1 VDD=30V, L=200
μ
H, IAV=70A
*
2 L
≤
200
μ
H, Single pulse
45
±
20
100
400
50
150
PW
≤
10
μ
s, duty cycle
≤
1%
Tc=25
°
C
--55 to +150
850
70
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Marking : K4164
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=45V, VGS=0V
VGS=
±
16V, VDS=0V
45
V
μ
A
μ
A
1
±
10
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0736
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
51607QA TI IM TC-00000690
SANYO Semiconductors
DATA SHEET
2SK4164
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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| 2SK4171 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4177 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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