- 您現在的位置：買賣IC網 > PDF目錄369209 > 2SK4164 (Sanyo Electric Co.,Ltd.) N-Channel Silicon MOSFET General-Purpose Switching Device PDF資料下載
參數資料
| 型號： | 2SK4164 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | N溝道MOSFET的硅通用開關設備 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 61K |
| 代理商： | 2SK4164 |
2SK4164
No. A0736-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=10V
ID=50A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=20V, VGS=10V, ID=100A
VDS=20V, VGS=10V, ID=100A
VDS=20V, VGS=10V, ID=100A
IS=100A, VGS=0V
1.2
46
2.6
V
S
77
2.5
3.6
Static Drain-to-Source On-State Resistance
3.3
5.0
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
11500
1500
1200
70
1050
710
650
220
34
47
0.9
1.2
Package Dimensions
unit : mm (typ)
7002-001
Switching Time Test Circuit
Avalanche Resistance Test Circuit
7.8
3
8.2
0
0
4
1.0
2.54
1.0
2.54
5.08
8
1
1
0.3
0.6
0.6
0
7.8
5
6
10.0
6.0
2
1
2
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
PW=10
μ
s
D.C.
≤
1%
10V
0V
VIN
P.G
50
G
S
ID=50A
RL=0.4
VDD=20V
VOUT
VIN
D
2SK4164
50
10V
0V
≥
50
VDD
L
2SK4164
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK416 | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK416L | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK416S | HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK427T | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK427U | TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SPAK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK416L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK416S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
| 2SK417 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK417 |
| 2SK4171 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK4177 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
發布緊急采購，3分鐘左右您將得到回復。