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參數資料
| 型號： | 41C16257 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充滿活力和快速頁面模式內存 |
| 文件頁數： | 1/17頁 |
| 文件大小： | 160K |
| 代理商： | 41C16257 |
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
FEATURES
Fast access and cycle time
TTL compatible inputs and outputs
Refresh Interval: 512 cycles/8 ms
Refresh Mode:
RAS-Only, CAS-before-RAS (CBR),
and Hidden
JEDEC standard pinout
Single power supply:
-- 5V
± 10% (IS41C16257)
-- 3.3V
± 10% (IS41LV16257)
Byte Write and Byte Read operation via two
CAS
Industrial temperature available
DESCRIPTION
The
ISSI IS41C16257 and the IS41LV16257 are 262,144
x 16-bit high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
byte, makes these devices ideal for use in 16- and 32-bit
wide data bus systems.
These features make the IS41C16257 and the IS41LV16257
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C16257 and the IS41LV16257 are packaged in a
40-pin, 400-mil SOJ and TSOP (Type II).
IS41C16257
IS41LV16257
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
MAY 1999
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
DR004-1B
05/24/99
KEY TIMING PARAMETERS
Parameter
-35
-60
Unit
Max.
RAS Access Time (tRAC)35
60
ns
Max.
CAS Access Time (tCAC)10
15
ns
Max. Column Address Access Time (tAA)18
30
ns
Min. Fast Page Mode Cycle Time (tPC)12
25
ns
Min. Read/Write Cycle Time (tRC)
60
110
ns
ISSI
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