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參數資料
| 型號： | 41C16257 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K × 16（4兆位）充滿活力和快速頁面模式內存 |
| 文件頁數： | 15/17頁 |
| 文件大小： | 160K |
| 代理商： | 41C16257 |
IS41C16257
IS41LV16257
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
DR004-1B
05/24/99
ISSI
AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless
otherwise noted.)
-35
-60
Symbol
Parameter
Min. Max.
Units
tRC
Random READ or WRITE Cycle Time
60
—
110
—
ns
tRAC
Access Time from
RAS(6,7)
—35
—
60
ns
tCAC
Access Time from
CAS(6,8,15)
—10
—
15
ns
tAA
Access Time from Column-Address(6)
—18
—
30
ns
tRAS
RAS Pulse Width
35
10K
60
10K
ns
tRP
RAS Precharge Time
20
—
40
—
ns
tCAS
CAS Pulse Width(26)
6
10K
10
10K
ns
tCP
CAS Precharge Time(9,25)
5—
10
—
ns
tCSH
CAS Hold Time (21)
35
—
60
—
ns
tRCD
RAS to CAS Delay Time(10,20)
11
28
20
45
ns
tASR
Row-Address Setup Time
0
—
— 0
— ns
tRAH
Row-Address Hold Time
6
—
10
—
ns
tASC
Column-Address Setup Time(20)
0—
ns
tCAH
Column-Address Hold Time(20)
6—
10
—
ns
tAR
Column-Address Hold Time
30
—
40
—
ns
(referenced to
RAS)
tRAD
RAS to Column-Address Delay Time(11)
12
20
15
30
ns
tRAL
Column-Address to
RAS Lead Time
18
—
30
—
ns
tRPC
RAS to CAS Precharge Time
0
—
0
—
ns
tRSH
RAS Hold Time(27)
8—
15
—
ns
tCLZ
CAS to Output in Low-Z(15,29)
3—
ns
tCRP
CAS to RAS Precharge Time(21)
5—
ns
tOD
Output Disable Time(19, 28, 29)
315
3
15
ns
tOE
Output Enable Time(15, 16)
—10
—
15
ns
tOEHC
OE HIGH Hold Time from CAS HIGH
10
—
10
—
ns
tOEP
OE HIGH Pulse Width
10
—
10
—
ns
tOES
OE LOW to CAS HIGH Setup Time
5
—
5
—
ns
tRCS
Read Command Setup Time(17, 20)
0—
ns
tRRH
Read Command Hold Time
0
—
0
—
ns
(referenced to
RAS)(12)
tRCH
Read Command Hold Time
0
—
0
—
ns
(referenced to
CAS)(12,17,21)
tWCH
Write Command Hold Time(17, 27)
5—
10
—
ns
tWCR
Write Command Hold Time
30
—
50
—
ns
(referenced to
RAS)(17)
tWP
Write Command Pulse Width(17)
5—
10
—
ns
tWPZ
WE Pulse Widths to Disable Outputs
10
—
10
—
ns
tRWL
Write Command to
RAS Lead Time(17)
8—
15
—
ns
tCWL
Write Command to
CAS Lead Time(17,21)
8—
15
—
ns
tWCS
Write Command Setup Time(14, 17, 20)
0—
ns
tDHR
Data-in Hold Time (referenced to
RAS)30
—
40
—
ns
(Continued)
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