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參數資料
| 型號： | IRFZ34VLPbF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 128K |
| 代理商： | IRFZ34VLPBF |
IRFZ34VS
IRFZ34VL
HEXFET
Power MOSFET
02/14/02
Parameter
Max.
30
21
120
70
0.46
± 20
30
7.0
4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
www.irf.com
1
V
DSS
= 60V
R
DS(on)
= 28m
I
D
= 30A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Description
D
2
Pak
IRFZ34VS
TO-262
IRFZ34VL
Parameter
Typ.
–––
–––
Max.
2.15
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
°
C/W
Thermal Resistance
PD - 94180
相關PDF資料 |
PDF描述 |
|---|---|
| IRFZ34VSPbF | HEXFET Power MOSFET |
| IRFZ44EPBF | HEXFET㈢ Power MOSFET |
| IRFZ44NPBF | HEXFET-R Power MOSFET |
| IRFZ44VZLPBF | HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
| IRFZ44VZPBF | HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRFZ34VPBF | 制造商:International Rectifier 功能描述:MOSFET N 60V 30A TO-220 |
| IRFZ34VS | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology |
| IRFZ34VSPBF | 制造商:International Rectifier 功能描述:MOSFET N 60V 30A D2-PAK |
| IRFZ35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220AB |
| IRFZ40 | 功能描述:MOSFET N-Chan 50V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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