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參數資料
| 型號： | 62C1024L |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K的× 8低功耗CMOS靜態RAM |
| 文件頁數： | 3/11頁 |
| 文件大小： | 65K |
| 代理商： | 62C1024L |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. E
11/26/03
3
IS62C1024L
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
V
OL
V
IH
V
IL
I
LI
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 2.1 mA
2.4
—
2.2
–0.3
–2
–10
–2
–10
—
0.4
V
V
V
V
μA
V
DD
+ 0.5
0.8
2
10
2
10
GND
≤
V
IN
≤
V
DD
Com.
Ind.
Com.
Ind.
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
μA
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
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