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參數資料
| 型號： | 7016S35PFGB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 16K X 9 DUAL-PORT SRAM, 35 ns, PQFP80 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-80 |
| 文件頁數： | 16/20頁 |
| 文件大小： | 164K |
| 代理商： | 7016S35PFGB |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
NOTE:
1.
At Vcc < 2.0V, Input leakages are undefined.
Capacitance(1)
(TA = +25°C, f = 1.0mhz, for TQFP ONLY)
NOTES:
1. This parameter is determined by device characteristics but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V .
Output Loads and AC Test
Conditions
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
*Including scope and jig.
3190 drw 06
893
30pF
347
5V
DATAOUT
BUSY
INT
893
5pF*
347
5V
DATAOUT
,
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
9
pF
COUT
Output Capacitance
VOUT = 3dV
10
pF
3190 tbl 07
Symbol
Parameter
Test Conditions
7016S
7016L
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5A
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to VCC
___
10
___
5A
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
3190 tbl 08
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
Figures 1 and 2
3190 tbl 09
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