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參數資料
| 型號： | 933334180113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 39K |
| 代理商： | 933334180113 |
1996 Sep 17
3
Philips Semiconductors
Product specication
Controlled avalanche diode
BAX12
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3
IF =10mA
750
mV
IF =50mA
840
mV
IF = 100 mA
900
mV
IF = 200 mA
1.0
V
IF = 400 mA
1.25
V
IR
reverse current
see Fig.5
VR =90V
100
nA
VR = 90 V; Tj = 150 °C
100
A
V(BR)R
reverse avalanche breakdown voltage
IR = 1 mA
120
170
V
Cd
diode capacitance
f = 1 MHz; VR =0;
see Fig.6
35
pF
trr
reverse recovery time
when switched from
IF = 30 mA to IR =30mA;
RL = 100 ; measured at
IR = 3 mA; see Fig.10
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W
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