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參數(shù)資料
| 型號(hào)： | 933742290212 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 47K |
| 代理商： | 933742290212 |
2001 Sep 05
3
Philips Semiconductors
Product specication
Schottky barrier double diode
BAT74
THERMAL CHARACTERISTICS
Note
1. Refer to SOT143B standard mounting conditions.
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Notes
1. Temperature coefficient of forward voltage
0.6%/K.
2. Pulsed test: tp = 300s; δ = 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA; note 1
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; note 2; see Fig.4
2
A
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR = 1 mA; see Fig.6
5ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
10
pF
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