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參數(shù)資料
| 型號： | 933742290212 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 47K |
| 代理商： | 933742290212 |
2001 Sep 05
4
Philips Semiconductors
Product specication
Schottky barrier double diode
BAT74
Fig.2 Power derating curve.
0
100
200
300
P tot
(mW)
MSA894
150
75
0
Tamb ( C)
o
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10 1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
010
20
30
V
(V)
R
10 3
I
R
(
A)
10 2
10
1
10 1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25 °C.
handbook, halfpage
010
20
30
0
5
10
15
VR (V)
Cd
(pF)
MSA891
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