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參數(shù)資料
型號: 934045830115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, UMT6, SMD, SC-88, 6 PIN
文件頁數(shù): 3/10頁
文件大小: 109K
代理商: 934045830115
2003 Apr 11
2
Philips Semiconductors
Product specication
Schottky barrier double diode
BAT74S
FEATURES
Low forward voltage
Guard ring protected
Small SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies are encapsulated in a SOT363 (SC-88)
small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
anode 1
2
not connected
3
cathode 2
4
anode 2
5
not connected
6
cathode 1
handbook, halfpage
65
4
12
3
MDB277
MSA370
12
3
65
4
Top view
Fig.1
Simplified outline (SOT363; SC-88) and
symbol.
Marking code: 74.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; see Fig.2
240
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
Double diode operation
VR
continuous reverse voltage
30
V
VR
continuous reverse voltage
series connection
60
V
IF
continuous forward current
110(1)
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
200
mA
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