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參數資料
| 型號： | 934045830115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, UMT6, SMD, SC-88, 6 PIN |
| 文件頁數： | 4/10頁 |
| 文件大小： | 109K |
| 代理商： | 934045830115 |
2003 Apr 11
3
Philips Semiconductors
Product specication
Schottky barrier double diode
BAT74S
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulsed test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; note 1; see Fig.4
2
A
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ;
measured at IR =1mA
5ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
416
K/W
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