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參數資料
| 型號： | 934052960127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 40K |
| 代理商： | 934052960127 |
Philips Semiconductors
Product specification
Damper diode
BY359X-1500, BY359X-1500S
fast, high-voltage
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
4.8
K/W
heatsink
without heatsink compound
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
BY359X-1500
BY359X-1500S
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 20 A
1.3
1.8
1.5
2.0
V
I
F = 10 A; Tj = 150C
1.00
1.5
1.25
1.75
V
I
R
Reverse current
V
R = 1300 V
10
100
10
100
A
V
R = 1300 V;
50
300
100
600
A
T
j = 100 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
BY359X-1500
BY359X-1500S
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
TYP.
MAX.
UNIT
t
rr
Reverse recovery time
I
F = 2 A; VR ≥ 30 V;
0.47
0.60
0.28
0.35
s
Q
s
Reverse recovery charge
-dI
F/dt = 20 A/s
1.6
2.0
0.70
0.95
C
V
fr
Peak forward recovery voltage
I
F = 10 A;
11.0
-
17.0
-
V
dI
F/dt = 30 A/s
Fig.1. Definition of t
rr, Qs and Irrm
Fig.2. Definition of V
fr
100%
time
dI
dt
F
I
R
I
F
I
rrm
trr
25%
Qs
time
V F
V
fr
V F
I
F
September 1998
2
Rev 1.300
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