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參數(shù)資料
| 型號： | 934054751127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 42K |
| 代理商： | 934054751127 |
Philips Semiconductors
Product specification
Rectifier diode
BYC8-600
ultrafast, low switching loss
FEATURES
SYMBOL
QUICK REFERENCE DATA
Extremely fast switching
V
R = 600 V
Low reverse recovery current
Low thermal resistance
V
F ≤ 1.85 V
Reduces switching losses in
associated MOSFET
I
F(AV) = 8 A
t
rr = 19 ns (typ)
APPLICATIONS
PINNING
SOD59 (TO220AC)
Active power factor correction
PIN
DESCRIPTION
Half-bridge lighting ballasts
Half-bridge/ full-bridge switched
1
cathode
mode power supplies.
2
anode
The BYC8-600 is supplied in the
SOD59 (TO220AC) conventional
tab
cathode
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
Peak repetitive reverse voltage
-
600
V
RWM
Crest working reverse voltage
-
600
V
R
Continuous reverse voltage
T
mb ≤ 110 C
-
500
V
I
F(AV)
Average forward current
δ = 0.5; with reapplied V
RRM(max);-
8
A
T
mb ≤ 82 C
I
FRM
Repetitive peak forward current
δ = 0.5; with reapplied V
RRM(max);
-
16
A
T
mb ≤ 82 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
55
A
current.
t = 8.3 ms
-
60
A
sinusoidal; T
j = 150C prior to surge
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
2.2
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
12
1
tab
2
April 2001
1
Rev 1.400
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