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參數(shù)資料
型號(hào): 9763-01
廠商: PEREGRINE SEMICONDUCTOR CORP
元件分類: PLL合成/DDS/VCOs
英文描述: 3.2 GHz Delta-Sigma modulated Fractional-N Frequency Synthesizer for Low Phase Noise Applications
中文描述: PLL FREQUENCY SYNTHESIZER, CQCC68
封裝: CERAMIC, QFJ-68
文件頁(yè)數(shù): 13/15頁(yè)
文件大小: 351K
代理商: 9763-01
Product Specification
PE9763
Page 7 of 15
Document No. 70-0140-02
│ www.psemi.com
2003-2006 Peregrine Semiconductor Corp. All rights reserved.
Table 6. AC Characteristics
VDD = 3.0 V, -40° C < TA < 85° C, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Control Interface and Latches (see Figures 3, 4)
fClk
Serial data clock frequency
(Note 1)
10
MHz
tClkH
Serial clock HIGH time
30
ns
tClkL
Serial clock LOW time
30
ns
tDSU
Sdata set-up time to Sclk rising edge
10
ns
tDHLD
Sdata hold time after Sclk rising edge
10
ns
tPW
S_WR pulse width
30
ns
tCWR
Sclk rising edge to S_WR rising edge
30
ns
tCE
Sclk falling edge to E_WR transition
30
ns
tWRC
S_WR falling edge to Sclk rising edge
30
ns
tEC
E_WR transition to Sclk rising edge
30
ns
Main Divider (Including Prescaler) (Note 4)
Fin
Operating frequency
275
3200
MHz
PFin
Input level range
External AC coupling
-5
5
dBm
Main Divider (Prescaler Bypassed) (Note 4)
Fin
Operating frequency
50
300
MHz
PFin
Input level range
External AC coupling
-5
5
dBm
Reference Divider
fr
Operating frequency
(Note 3)
100
MHz
Pfr
Reference input power (Note 2)
Single ended input
-2
dBm
Phase Detector
fc
Comparison frequency
(Note 3)
50
MHz
SSB Phase Noise (Fin = 1.9 GHz, fr = 20 MHz, fc = 10 MHz, LBW = 50 kHz, VDD = 3.0 V, Temp = 25° C) (Note 4)
ΦN
Phase Noise
1 kHz Offset
-88
dBc/Hz
ΦN
Phase Noise
10 kHz Offset
-92
dBc/Hz
Note 1:
fclk is verified during the functional pattern test. Serial programming sections of the functional pattern are clocked at 10 MHz to verify fclk
specification.
Note 2:
CMOS logic levels can be used to drive reference input if DC coupled. Voltage input needs to be a minimum of 0.5 Vp-p. For optimum
phase noise performance, the reference input falling edge rate should be faster than 80mV/ns.
Note 3:
Parameter is guaranteed through characterization only and is not tested.
Note 4:
Parameter below are not tested for die sales. These parameters are verified during the element evaluation per the die flow.
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