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參數(shù)資料
| 型號(hào)： | AA032P1-00 |
| 廠商： | Alpha Industries, Inc. |
| 元件分類(lèi)： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:3; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| 中文描述： | 30-36 GHz的砷化鎵單片功率放大器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 163K |
| 代理商： | AA032P1-00 |
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1
30–36 GHz GaAs MMIC
Power Amplifier
Features
I
Single Gate and Drain Biases
I
25 dBm Typical P
1 dB
Output Power
at 31 GHz
I
11 dB Typical Small Signal Gain
I
0.25
μ
m Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA032P1-00
Description
Alpha’s two-stage reactively-matched Ka band GaAs
MMIC power amplifier has a typical P
1 dB
of 25 dBm with
10 dB associated gain and 15% power added efficiency
at 31 GHz.
The chip uses Alpha’s proven
0.25
μ
m MESFET technology, and is based upon MBE
layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. Single gate and drain bias pads cover both
stages, with the added convenience that the chip can be
wire bonded from either side for either bias.All chips are
screened for gain, output power, efficiency and S-
parameters prior to shipment for guaranteed performance.
A broad range of applications exist in both the military and
commercial areas where high power and gain are
required.
Parameter
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
Typ.
2
400
11
-7
-8
25
27
8
42
Max.
450
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
1. Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
F = 30–31, 34–36 GHz
F = 30–31, 34–36 GHz
F = 30–31, 34–36 GHz
F = 31 GHz
F = 31 GHz
F = 31 GHz
8
-6
-6
24
25
Electrical Specifications at 25°C (V
DS
= 6 V, V
GS
= -1 V)
1
1
0
1
0
0
2.166
0.120
1.143
1.143
2.285
1
2
0.107
2.179
0.000
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
-55
°
C to +90
°
C
-65
°
C to +150
°
C
7 V
DC
22 dBm
175
°
C
Absolute Maximum Ratings
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