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參數(shù)資料
| 型號(hào)： | AD7896JR |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | ADC |
| 英文描述： | 2.7 V to 5.5 V, 12-Bit, 8 us ADC in 8-Pin SO/DIP |
| 中文描述： | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 367K |
| 代理商： | AD7896JR |
AD7896
REV. B
–3–
A, B
Versions
J
Version
S
Version
Parameter
Units
Test Conditions/Comments
t
1
t
2
t
3
t
4
40
40
2
40
2
40
40
2
40
2
40
45
2
45
2
ns min
ns min
ns min
CONVST
Pulse Width
SCLK High Pulse Width
SCLK Low Pulse Width
Data Access Time After Falling Edge of SCLK
V
DD
= 5 V
±
10%
V
DD
= 2.7 V to +3.6 V
Data Hold Time After Falling Edge of SCLK
Bus Relinquish Time After Falling Edge of SCLK
60
3
100
3
10
50
4
60
3
100
3
10
50
4
70
3
110
3
10
50
4
ns max
ns max
ns min
ns max
t
5
t
6
NOTES
1
Sample tested at +25
°
C to ensure compliance. All input signals are measured with tr = tf = 1 ns (10% to 90% of V
DD
) and timed from a voltage level of +1.4 V.
2
The SCLK maximum frequency is 10 MHz. Care must be taken when interfacing to account for the data access time, t
4
, and the setup time required for the user's
processor. These two times will determine the maximum SCLK frequency that the user's system can operate with. See Serial Interface section for more information.
3
Measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.0 V.
4
Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t
6
, quoted in the timing characteristics is the true bus relinquish time
of the part and as such is independent of external bus loading capacitances.
TIMING CHARACTERISTICS
1
(V
DD
= +2.7 V to +5.5 V, AGND = DGND = 0 V)
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25
°
C unless otherwise noted)
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
DD
to DGND. . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND . . . . . . –0.3 V to V
DD
+ 0.3 V
Digital Input Voltage to DGND . . . . . . –0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to DGND . . . . . –0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial (A, B Versions) . . . . . . . . . . . . . . .–40
°
C to +85
°
C
Extended (S Version) . . . . . . . . . . . . . . . . .–55
°
C to +125
°
C
Storage Temperature Range . . . . . . . . . . . . .–65
°
C to +150
°
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°
C
Plastic DIP Package, Power Dissipation . . . . . . . . . . .450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 125
°
C/W
θ
JC
Thermal Impedance. . . . . . . . . . . . . . . . . . . . . . 50
°
C/W
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . +260
°
C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 160
°
C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 75
°
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>4000 V
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
+1.6V
2.0mA
2.0mA
50pF
TO
OUTPUT
PIN
Figure 1. Load Circuit for Access Time and Bus Relinquish
Time
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