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參數資料
| 型號： | AD8009 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 1 GHz, 5,500 V/us Low Distortion Amplifier |
| 中文描述： | 1千兆赫，5,500 V的/我們的低失真放大器 |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 229K |
| 代理商： | AD8009 |
AD8009
–3–
REV. B
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . 0.75 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±
3.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65
°
C to +125
°
C
Operating Temperature Range (A Grade) . . . –40
°
C to +85
°
C
Lead Temperature Range (Soldering 10 sec) . . . . . . . .+300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package:
θ
JA
= 155
°
C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8009 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately +150
°
C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by the
package. Exceeding a junction temperature of +175
°
C for an
extended period can result in device failure.
While the AD8009 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150
°
C) is not exceeded under all conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
AMBIENT TEMPERATURE
–
°
C
90
80
2.0
1.0
0
–
50
1.5
0.5
T
J
= +150
°
C
M
–
70
60
50
40
30
20
10
0
–
40
–
30
–
20
–
10
8-LEAD SOIC PACKAGE
5-LEAD SOT-23 PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
Branding
Information
Model
AD8009AR
AD8009AR-REEL
AD8009ART
AD8009ART-REEL
AD8009ART-REEL7
AD8009-EB
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead SOIC
13" Tape and Reel
5-Lead SOT-23
13" Tape and Reel
7" Tape and Reel
Evaluation Board
SO-8
SO-8
RT-5
RT-5
RT-5
SO-8
HKJ
HKJ
HKJ
WARNING!
ESD SENSITIVE DEVICE
相關PDF資料 |
PDF描述 |
|---|---|
| AD8009AR | 1 GHz, 5,500 V/us Low Distortion Amplifier |
| AD8009ART | 1 GHz, 5,500 V/us Low Distortion Amplifier |
| AD8009ART-REEL | 1 GHz, 5,500 V/us Low Distortion Amplifier |
| AD8009ART-REEL7 | Buffer with 3-State Output |
| AD8009AR-REEL | 1 GHz, 5,500 V/us Low Distortion Amplifier |
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