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參數資料
| 型號： | ADUC836 |
| 廠商： | Analog Devices, Inc. |
| 元件分類： | 串行ADC |
| 英文描述： | MicroConverter, Dual 16-Bit-ADCs with Embedded 62 kB Flash MCU |
| 中文描述： | MicroConverter的，雙16位ADC的與嵌入62 kB閃存微控制器 |
| 文件頁數： | 29/80頁 |
| 文件大小： | 5913K |
| 代理商： | ADUC836 |
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ADuC836
–29–
ADuC836 Flash/EE Memory Reliability
The Flash/EE program and data memory arrays on the ADuC836
are fully qualified for two key Flash/EE memory characteristics:
Flash/EE Memory Cycling Endurance and Flash/EE Memory
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four independent,
sequential events, which are defined as:
a. Initial page erase sequence
b. Read/verify sequence
c. Byte program sequence
d. Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded, signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specification tables, the ADuC836 Flash/EE
Memory Endurance qualification has been carried out in
accordance with JEDEC Specification A117 over the industrial
temperature range of –40°C, +25°C, +85°C, and +125°C. The
results allow the specification of a minimum endurance figure
over supply and temperature of 100,000 cycles, with an endur-
ance figure of 700,000 cycles being typical of operation at 25°C.
Retention
quantifies the ability of the Flash/EE memory to retain
its programmed data over time. Again, the ADuC836 has been
qualified in accordance with the formal JEDEC Retention Life-
time Specification (A117) at a specific junction temperature
(T
J
= 55°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described above,
before data retention is characterized. This means that the Flash/EE
memory is guaranteed to retain its data for its full specified reten-
tion lifetime every time the Flash/EE memory is reprogrammed.
It should also be noted that retention lifetime, based on an activa-
tion energy of 0.6 eV, will derate with T
J
, as shown in Figure 16.
40
60
70
90
T
J
JUNCTION TEMPERATURE –
C
R
250
200
150
100
50
0
50
80
110
300
100
A100 YEARS MIN.
AT T
J
= 55
C
Figure 16. Flash/EE Memory Data Retention
NONVOLATILE FLASH/EE MEMORY
Flash/EE Memory Overview
The ADuC836 incorporates Flash/EE memory technology
on-chip to provide the user with nonvolatile, in-circuit, repro-
grammable code and data memory space. Flash/EE memory is
a relatively recent type of nonvolatile memory technology and is
based on a single transistor cell architecture. This technology is
basically an outgrowth of EPROM technology and was devel-
oped through the late 1980s. Flash/EE memory takes the flexible
in-circuit reprogrammable features of EEPROM and combines
them with the space efficient/density features of EPROM (see
Figure 15).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array, like EPROM, can be im-
plemented to achieve the space efficiencies or memory densities
required by a given design.
Like EEPROM, flash memory can be programmed in-system
at a byte level, although it must first be erased; the erase being
performed in page blocks. Thus, flash memory is often and more
correctly referred to as Flash/EE memory.
FLASH/EE MEMORY
TECHNOLOGY
SPACE EFFICIENT/
DENSITY
IN-CIRCUIT
REPROGRAMMABLE
EPROM
TECHNOLOGY
EEPROM
TECHNOLOGY
Figure 15. Flash/EE Memory Development
Overall, Flash/EE memory represents a step closer to the ideal
memory device that includes nonvolatility, in-circuit programma-
bility, high density, and low cost. Incorporated into the ADuC836,
Flash/EE memory technology allows the user to update program
code space in-circuit, without the need to replace one-time pro-
grammable (OTP) devices at remote operating nodes.
Flash/EE Memory and the ADuC836
The ADuC836 provides two arrays of Flash/EE memory for user
applications. 62 Kbytes of Flash/EE program space are provided
on-chip to facilitate code execution without any external dis-
crete ROM device requirements. The program memory can be
programmed in-circuit, using the serial download mode provided,
using conventional third party memory programmers, or via any
user defined protocol in User Download (ULOAD) mode.
A 4 Kbyte Flash/EE data memory space is also provided on-chip.
This may be used as a general-purpose, nonvolatile scratch pad
area. User access to this area is via a group of seven SFRs. This
space can be programmed at a byte level, although it must first be
erased in 4-byte pages.
A Single Flash/EE
Memory Endurance
Cycle
REV. A
相關PDF資料 |
PDF描述 |
|---|---|
| ADUC836BCP | MicroConverter, Dual 16-Bit-ADCs with Embedded 62 kB Flash MCU |
| ADUC836BS | MicroConverter, Dual 16-Bit-ADCs with Embedded 62 kB Flash MCU |
| ADUC842BCP62-3 | MicroConverter 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU |
| ADUC843BCP62-5 | MicroConverter 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU |
| ADUC842BCP62-5 | MicroConverter 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ADUC836_02 | 制造商:AD 制造商全稱:Analog Devices 功能描述:MicroConverter, Dual 16-Bit ADCs with Embedded 62 kB Flash MCU |
| ADUC836BCP | 制造商:Rochester Electronics LLC 功能描述: 制造商:Analog Devices 功能描述: |
| ADUC836BCPZ | 功能描述:IC MCU 62K FLASH ADC/DAC 56LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標準包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設備:欠壓檢測/復位，LED，POR，PWM，WDT 輸入/輸出數:16 程序存儲器容量:4KB（4K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數據轉換器:- 振蕩器型:內部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC836BCPZ-REEL | 功能描述:IC MCU 62K FLASH ADC/DAC 56LFCSP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標準包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設備:欠壓檢測/復位，LED，POR，PWM，WDT 輸入/輸出數:16 程序存儲器容量:4KB（4K x 8） 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數據轉換器:- 振蕩器型:內部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC836BS | 制造商:Analog Devices 功能描述:MCU 8-bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 52-Pin MQFP 制造商:Analog Devices 功能描述:8BIT MCU +16BIT DUAL ADC MQFP52 |
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