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參數資料
| 型號： | ADUC845BCP8-3 |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | MicroConverter Multichannel 24-/16-Bit ADCs with Embedded 62 kB Flash and Single-Cycle MCU |
| 中文描述： | 8-BIT, FLASH, 12.58 MHz, MICROCONTROLLER, QCC56 |
| 封裝： | 8 X 8 MM, MO-220-VLLD-2, LFCSP-56 |
| 文件頁數： | 51/108頁 |
| 文件大小： | 1109K |
| 代理商： | ADUC845BCP8-3 |
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ADuC845/ADuC847/ADuC848
USING FLASH/EE DATA MEMORY
The 4 kbytes of Flash/EE data memory are configured as 1024
pages, each of 4 bytes. As with the other ADuC845/ADuC847/
ADuC848 peripherals, the interface to this memory space is via
a group of registers mapped in the SFR space. A group of four
data registers (EDATA1–4) holds the 4 bytes of data at each
page. The page is addressed via the EADRH and EADRL
registers. Finally, ECON is an 8-bit control register that can be
written to with one of nine Flash/EE memory access commands
to trigger various read, write, erase, and verify functions. A block
diagram of the SFR interface to the Flash/EE data memory array
is shown in Figure 32.
ECON—Flash/EE Memory Control SFR
Programming either Flash/EE data memory or Flash/EE
program memory is done through the Flash/EE memory
control SFR (ECON). This SFR allows the user to read, write,
erase, or verify the 4 kbytes of Flash/EE data memory or the
56 kbytes of Flash/EE program memory.
Rev. A | Page 51 of 108
BYTE 1
(0000H)
E
BYTE 1
(0004H)
BYTE 1
(0008H)
BYTE 1
(000CH)
BYTE 1
(0FF8H)
BYTE 1
(0FFCH)
BYTE 2
(0001H)
E
BYTE 2
(0005H)
BYTE 2
(0009H)
BYTE 2
BYTE 2
(0FF9H)
BYTE 2
BYTE 3
(0002H)
E
BYTE 3
(0006H)
BYTE 3
(000AH)
BYTE 3
(000EH)
BYTE 3
(0FFAH)
BYTE 3
(0FFEH)
BYTE 4
(0003H)
E
BYTE 4
(0007H)
BYTE 4
(000BH)
BYTE 4
(000FH)
BYTE 4
(0FFBH)
BYTE 4
01H
00H
02H
03H
3FEH
3FFH
P
(
BYTE
ADDRESSES
ARE GIVEN IN
BRACKETS
0
Figure 32. Flash/EE Data Memory Control and Configuration
Table 32. ECON—Flash/EE Memory Commands
ECON Value
(Normal Mode, Power-On Default)
01H Read
4 bytes in the Flash/EE data memory, addressed by the
page address EADRH/L, are read into EDATA1–4.
02H Write
Results in 4 bytes in EDATA1–4 being written to the
Flash/EE data memory, at the page address given by
EADRH (0
≤
EADRH < 0400H). Note that the 4 bytes in the
page being addressed must be pre-erased.
Command Description
Command Description
(ULOAD Mode)
Not implemented. Use the MOVC instruction.
Bytes 0 to 255 of internal XRAM are written to the 256 bytes of
Flash/EE program memory at the page address given by
EADRH/L (0
≤
EADRH/L < E0H).
Note that the 256 bytes in the page being addressed must be
pre-erased.
Reserved.
Not implemented. Use the MOVC and MOVX instructions to
verify the Write in software.
03H
04H Verify
Reserved.
Verifies that the data in EDATA1–4 is contained in the
page address given by EADRH/L. A subsequent read of
the ECON SFR results in a 0 being read if the verification
is valid, or a nonzero value being read to indicate an
invalid verification.
4-byte page of Flash/EE data memory address is erased
by the page address EADRH/L.
05H Erase Page
64-byte page of FLASH/EE program memory addressed by the
byte address EADRH/L is erased. A new page starts when EADRL
is equal to 00H, 80H, or C0H.
The entire 56 kbytes of ULOAD are erased.
Not implemented. Use the MOVC command.
06H Erase All
81H ReadByte
4 kbytes of Flash/EE data memory are erased.
The byte in the Flash/EE data memory, addressed by the
byte address EADRH/L, is read into EDATA1 (0
≤
EADRH/L
≤
0FFFH).
The byte in EDATA1 is written into Flash/EE data memory
at the byte address EADRH/L.
Configures the ECON instructions (above) to operate on
Flash/EE data memory.
Enters ULOAD mode; subsequent ECON instructions
operate on Flash/EE program memory.
82H WriteByte
The byte in EDATA1 is written into Flash/EE program memory at
the byte address EADRH/L (0 ≤ EADRH/L ≤ DFFFH).
Enters normal mode, directing subsequent ECON instructions to
operate on the Flash/EE data memory.
Enables the ECON instructions to operate on the Flash/EE
program memory. ULOAD entry mode.
0FH EXULOAD
F0H ULOAD
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