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參數資料
| 型號： | ADV7150 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | CMOS 220 MHz True-Color Graphics Triple 10-Bit Video RAM-DAC(三通道,10位視頻RAM-D/A轉換器) |
| 中文描述： | 220兆赫的CMOS真彩色圖形三路10位顯存，數模轉換器（三通道，10位視頻RAM的的D / A轉換器） |
| 文件頁數： | 33/36頁 |
| 文件大小： | 434K |
| 代理商： | ADV7150 |
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ADV7150
–33–
REV. A
APPE NDIX 7
T HE RMAL AND E NVIRONME NT AL CONSIDE RAT IONS
T he ADV7150 is a very highly integrated monolithic silicon
device. T his high level of integration, in such a small package,
inevitably leads to consideration of the thermal and environ-
mental conditions in which the ADV7150 must operate. Reli-
ability of the device is significantly enhanced by keeping it as
cool as possible. In order to avoid destructive damage to the
device, the absolute maximum junction temperature of 150
°
C
must never be exceeded. Certain applications, depending on
pixel data rates, may require forced air cooling or external heat-
sinks. T he following data is intended as a guide in evaluating
the operating conditions of a particular application so that opti-
mum device and system performance is achieved.
It should be noted that information on package characteristics
published herein may not be the most up-to-date at the time of
reading this. Advances in package compounds and manufacture
will inevitably lead to improvements in the thermal data. Please
contact your local sales office for the most up-to-date information.
Power Dissipation
T he diagram shows graphs of power dissipation in watts vs.
pixel clock frequency for the ADV7150.
P
1.50
0.50
1.25
0.75
1.00
PIXEL CLOCK FREQUENCY – MHz
60
220
80
180
200
160
140
120
100
V
AA
= 5V
V
REF
= 1.2V
T
A
= +25
°
C
NOTE: THE "WORST CASE ON-SCREEN PATTERN" CORRESPONDS TO FULL-SCALE
TRANSITION ON EACH PIXEL VALUE FOR EVERY CLOCK EDGE (00H, FFH, 00H, ... ).
THE "TYPICAL ON-SCREEN PATTERN" CORRESPONDS TO LINEAR CHANGES IN THE
PIXEL INPUT (I. E., A BLACK TO WHITE RAMP). IN GENERAL, COLOR IMAGES TEND
TO APPROXIMATE THIS CHARACTERISTIC.
Typical Power Dissipation vs. Pixel Rate
Package Characteristics
T he table of thermal characteristics shows typical information
for the ADV7150 (160-Lead Plastic Power QFP) using various
values of Airflow.
Junction to Case (
θ
JC
) T hermal Resistance for this particular
part is:
θ
JC
(160
-Lead Plastic Power QFP)
=
1.0
°
C/W
(Note:
θ
JC
is independent of airflow.)
T able B. T hermal Characteristics vs. Airflow
Air Velocity
(Linear feet/min)
0
(Still Air)
50
100
200
θ
JA
(
°
C/W)
No Heatsink
EG&G D10100-28 Heatsink 23
T hermalloy 2290 Heatsink
25.5
23
20
17
21
18
15
19
16
12
19
T hermal Model
T he junction temperature of the device in a specific application
is given by:
T
J
=
T
A
+
P
D
(
θ
J
C
+
θ
CA
)
or
T
J
=
T
A
+
P
D
(
θ
J
A
)
(1)
(2)
where:
T
J
= Junction T emperature of Silicon (
°
C)
T
A
= Ambient T emperature (
°
C)
P
D
= Power Dissipation (W)
θ
J
C
= Junction to Case T hermal Resistance (
°
C/W)
θ
CA
= Case to Ambient T hermal Resistance (
°
C/W)
θ
J
A
= Junction to Ambient T hermal Resistance (
°
C/W)
Package E nhancements
T he standard QFP package has been enhanced to a PowerQuad2
package. T his supports an improved thermal performance com-
pared to standard QFP. In this case, the die is attached to
heatslug so that the power that is dissipated can be conducted to
the external surface of the package. T his provides a highly effi-
cient path for the transfer of heat to the package surface. T he
package configuration also provides an efficient thermal path
from the ADV7150 to the Printed Circuit Board via the leads.
Heatsinks
T he maximum silicon junction temperature should be limited to
100
°
C. T emperatures greater than this will reduce long-term
device reliability. T o ensure that the silicon junction tempera-
ture stays within prescribed limits, the addition of an external
heatsink may be necessary. Heatsinks will reduce
θ
JA
as shown
in the T hermal Characteristics vs. Airflow table.
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