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參數資料
| 型號： | AM003536WM-BM-R |
| 元件分類： | 放大器 |
| 英文描述： | 10 MHz - 3500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-10 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 282K |
| 代理商： | AM003536WM-BM-R |
E-mail: products@amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
www.amcomusa.com
401 Professional Drive, Gaithersburg, MD 20879
DESCRIPTION
AMCOM’s AM003536WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23 dB gain, and 36
dBm output power over the 0.01 to 3.5 GHz band. This MMIC is in a ceramic package with both RF and DC leads
at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. AM003536WM-FM-R is
AM003536WM-BM-R assembled on a copper flange carrier for screwing on to a metal heat sink. Both parts are
RoHS compliant.
TYPICAL PERFORMANCE * (Bias Conditions**: Vdd = +20V, Idq1 = 150mA, Idq2 = 550mA)
Parameters
Minimum
Typical **
Maximum
Frequency
0.02 – 2.5GHz
0.01 – 3.5GHz
-
Small Signal Gain
20 dB
23 dB
26 dB
Gain Ripple
-
± 1.5 dB
± 3.0 dB
P1dB @ 1 GHz
33.0 dBm
35.0 dBm
-
Psat
35.0 dBm
37.0 dBm
-
Efficiency @ P1dB
-
20 %
IP3 @ 1GHz
-
48 dBm
Input Return Loss
13 dB
20dB
Output Return Loss
7 dB
10dB
Thermal Resistance
4.5 °C/W
*
Specifications subject to change without notice.
**
Gate biases corresponding to above currents are Vgs1=-1V, Igs1 < 2mA, Vgs2=-0.75V, Igs2 < 5mA and may
vary from lot to lot. Gate currents could reach above limits only near power saturation
AM003536WM-BM-R
AM003536WM-FM-R
December 2008
Rev 4
APPLICATIONS
Software Radio
Instrumentation
Gain block
FEATURES
Wide bandwidth from 10MHz to 3.5 GHz
High output power, P1dB = 36 dBm
High gain, 23dB
Input /Output matched to 50 Ohms
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