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參數資料
| 型號： | AM0912-300 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 32K |
| 代理商： | AM0912-300 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CBO
IC = 50 mA
65
V
BV
CER
IC = 50 mA
RBE = 10
65
V
BV
EBO
IE = 15 mA
3.0
V
I
CES
VCB = 50 V
30
mA
h
FE
VCE = 5.0 V
IC = 5.0 A
10
---
POUT
P
G
ηηηη
C
VCC = 50 V
f = 960 to 1215 MHz
PIN = 60 W
Pulse Width = 10
S
Duty Cycle = 10%
300
7.0
38
330
7.4
45
W
dB
%
PACKAGE - .400 2L FLG(A)
RF POWER TRANSISTOR
AM0912-300
DESCRIPTION:
The
ASI AM0912-300 is a Common
Base Transistor Designed for DME
and TACAN Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
Gold Metallization
Hermetic Package
Input/Output Matching
MAXIMUM RATINGS
IC
24 A
VCC
50 V
P
DISS
940 W @ TC =
≤ 100 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θθθθ
JC
0.16 °C/W
MIN IM U M
inches / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAX IMU M
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / m m
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00
.131 / 3.33
.135 / 3.43
.145 / 3.68
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03
.407 / 10.34
.890 / 22.61
.910 / 23.11
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相關代理商/技術參數 |
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