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參數資料
| 型號： | AOB420L |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 323K |
| 代理商： | AOB420L |
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
8.1
33
1
Max
12
40
1.5
R
θ
JL
A
Repetitive avalanche energy L=0.1mH
C
120
100
50
3.1
2
mJ
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±20
110
65
200
30
Pulsed Drain Current
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
Maximum
30
Units
T
C
=25°C
G
T
C
=100°C
B
W
A
P
D
°C
-55 to 175
I
D
W
AOB420, AOB420L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Oct 2004
Features
V
DS
(V) = 30V
I
D
= 110A
R
DS(ON)
< 6.5m
(V
GS
= 10V)
R
DS(ON)
< 10.0m
(V
GS
= 4.5V)
General Description
The AOB420 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
AOB420L
(Green Product) is offered in a Lead Free
package.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
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