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參數(shù)資料
| 型號： | AP4816GSM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 134K |
| 代理商： | AP4816GSM |
Advanced Power
DUAL N-CHANNEL MOSFET WITH
Electronics Corp.
SCHOTTKY DIODE
▼ Simple Drive Requirement
CH-1 BVDSS
30V
▼ DC-DC Converter Suitable
RDS(ON)
22mΩ
▼ Fast Switching Performance
ID
6.7A
CH-2 BVDSS
30V
RDS(ON)
13mΩ
Description
ID
11.5A
Absolute Maximum Ratings
Symbol
Rating
Units
Channel-2
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
11.5
A
ID@TA=70℃
Continuous Drain Current
3
9.2
A
IDM
Pulsed Drain Current
1
40
A
PD@TA=25℃
Total Power Dissipation
2.4
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Units
Max.
Rthj-a (CH-1)
Thermal Resistance Junction-ambient
3
90
℃
/W
Rthj-a (CH-2)
Thermal Resistance Junction-ambient
3
53
℃
/W
Rthj-a (Schottky)
Thermal Resistance Junction-ambient
3
60
℃
/W
Data and specifications subject to change without notice
1.4
0.01
200515071-1/9
42
52
Value
Thermal Data
Typ.
70
Parameter
6.7
5.3
30
±20
AP4816GSM
Channel-1
RoHS-compliant Product
The Advanced Power MOSFETs from APEC provide the
designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G1
S2/A
G2
D1
S1/D2
SO-8
G1
D1
S1/D2
G2
N-Channel 1
MOSFET
S2/A
N-Channel 2
MOSFET
Schottky Diode
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