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參數資料
| 型號： | AP4816GSM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 7/9頁 |
| 文件大小： | 134K |
| 代理商： | AP4816GSM |
Channel-2
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
7/9
AP4816GSM
0
30
60
90
120
150
180
012345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G = 3.0V
0
25
50
75
100
125
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
5.0V
4.5V
V G = 3.0V
10
12
14
16
18
20
35
79
11
V GS ,Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =8 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =11 A
V G =10V
1.5
1.6
1.7
1.8
1.9
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
0.01
0.10
1.00
10.00
0.1
0.3
0.5
0.7
0.9
1.1
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
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