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參數資料
| 型號： | AP6679GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 218K |
| 代理商： | AP6679GJ |
AP6679GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
7
9
11
13
15
357
9
11
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D = -24A
T C =25 ℃
0
40
80
120
160
200
240
280
0
0.5
1
1.5
2
2.5
3
3.5
4
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
0.6
1
1.4
1.8
2.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V)
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -30A
V G = -10V
0
50
100
150
0.0
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =150
o C
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
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PDF描述 |
|---|---|
| AP6679GJ-HF | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP6679GH-HF | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP6679GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP6679GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP6679GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GP-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP6679GR | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
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