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參數(shù)資料
| 型號： | AP9923GEO-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7000 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AP9923GEO-HF |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-Resistance
BVDSS
-12V
▼ Small & Thin Package
RDS(ON)
25mΩ
▼ Capable of 1.8V Gate Drive
ID
-7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
125
℃
/W
Rthj-L
Maximum Thermal Resistance, Junction-lead
75
℃
/W
Data and specifications subject to change without notice
Storage Temperature Range
-55 to 150
Total Power Dissipation
1
Linear Derating Factor
Continuous Drain Current
3
-5.0
Pulsed Drain Current
1
-30
Gate-Source Voltage
+8
Continuous Drain Current
3
-7.0
Parameter
Rating
Drain-Source Voltage
- 12
AP9923GEO-HF
-55 to 150
Halogen-Free Product
0.01
201009294
Operating Junction Temperature Range
Thermal Data
Parameter
1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
D1
S2
G2
D2
D2
S2
G2
D1
S1
G1
TSSOP-8
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參數(shù)描述 |
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