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參數資料
| 型號： | AP9928GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數： | 4/4頁 |
| 文件大小： | 72K |
| 代理商： | AP9928GEM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9928GEM
Q
VG
4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
10
203040
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
V DS =10 V
V DS =12 V
V DS =1 6 V
I D =7 A
100
1000
10000
1
4
7
1013
1619
V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
C iss
C oss
C rss
0
10
20
30
01234
V GS , Gate-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T j =150
o C
T j =25
o C
V DS =5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
er
m
al
R
espon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP9928GEO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9928GEO-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET DUALN 20V 23MOHM TSSOP-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, DUALN, 20V, 23MOHM, TSSOP-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, DUALN, 20V, 23MOHM, TSSOP-8, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.023ohm, Rds(on) Test Voltage Vgs:4.5V, Power Dissipation Pd:1W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, DUALN, 20V, 23MOHM, TSSOP-8, Transistor Polarity:N Channel, Continuous D |
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