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參數資料
| 型號： | APT12GT60KR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 391K |
| 代理商： | APT12GT60KR |
052-6201
Rev
E
12-2005
APT12GT60KR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 0.5mA)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 10A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 10A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT12GT60KR(G)
600
±30
25
12
30
30A @ 600V
108
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
1.6
2.0
2.5
2.8
25
1000
±100
600V
APT12GT60KR
APT12GT60KRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
G
C
E
TO-220
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT12GT60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube |
| APT12M80B | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT12M80S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT13003D | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
| APT13003DI-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
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