欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APT30GP60JDQ1
元件分類: IGBT 晶體管
英文描述: 67 A, 600 V, N-CHANNEL IGBT
封裝: ISOTOP-4 PIN
文件頁數: 2/9頁
文件大小: 456K
代理商: APT30GP60JDQ1
050-7452
Rev
A
9-2005
APT30GP60JDQ1
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.51
1.7
29.2
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 300V
I
C = 30A
T
J = 150°C, RG = 5, VGE =
15V, L = 100H,V
CE = 600V
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 30A
R
G = 5
T
J = +25°C
Inductive Switching (125°C)
V
CC =400V
V
GE = 15V
I
C = 30A
R
G = 5
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
3200
295
20
7.5
90
20
30
120
13
18
55
46
260
335
250
330
13
18
85
80
260
510
520
750
UNIT
pF
V
nC
A
ns
J
ns
J
相關PDF資料
PDF描述
APT30GP60JDQ1 67 A, 600 V, N-CHANNEL IGBT
APT30M36B2LLG 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M36LLL 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT30M36LLLG 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT30M36B2LL 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
APT30GP60LDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GP60LDLG 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264
APT30GS60BRDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GS60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT30GS60BRDQ2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
主站蜘蛛池模板: 新兴县| 永定县| 博爱县| 焉耆| 新民市| 梧州市| 定远县| 保定市| 德化县| 晋宁县| 元阳县| 高青县| 阿拉善左旗| 教育| 喜德县| 沂南县| 雷山县| 龙游县| 毕节市| 赤城县| 仁怀市| 肥城市| 德保县| 宣武区| 扎兰屯市| 蕲春县| 汝州市| 庄浪县| 墨玉县| 收藏| 边坝县| 五指山市| 辰溪县| 巴东县| 德保县| 鸡泽县| 卓尼县| 夏津县| 栾城县| 红安县| 志丹县|