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參數資料
| 型號： | APT30GP60JDQ1 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 PIN |
| 文件頁數： | 6/9頁 |
| 文件大小： | 456K |
| 代理商： | APT30GP60JDQ1 |
050-7452
Rev
A
9-2005
APT30GP60JDQ1
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Collector Current
CollectorVoltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT15DQ60
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
Collector Current
Collector Voltage
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PDF描述 |
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| APT30GP60JDQ1 | 67 A, 600 V, N-CHANNEL IGBT |
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| APT30M36LLLG | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT30GP60LDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
| APT30GS60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
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