型號(hào): | APT30GP60JDQ1 |
元件分類(lèi): | IGBT 晶體管 |
英文描述: | 67 A, 600 V, N-CHANNEL IGBT |
封裝: | ISOTOP-4 PIN |
文件頁(yè)數(shù): | 8/9頁(yè) |
文件大小: | 456K |
代理商: | APT30GP60JDQ1 |
相關(guān)PDF資料 |
PDF描述 |
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APT30GP60JDQ1 | 67 A, 600 V, N-CHANNEL IGBT |
APT30M36B2LLG | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT30M36LLL | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
APT30M36LLLG | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
APT30M36B2LL | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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APT30GP60LDL | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
APT30GS60BRDL | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |