- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48369 > APT35GP120B 96 A, 1200 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | APT35GP120B |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 96 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 88K |
| 代理商： | APT35GP120B |
050-7406
Rev
D
6-2003
APT35GP120B
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
V
GE =
10V,TJ=125°C
VGE= 15V
VGE= 10V
V
GE
=15V,TJ=125°C
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
GE
=15V,TJ=25°C
V
GE =
10V,TJ=25°C
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
180
160
140
120
100
80
60
40
20
0
100
90
80
70
60
50
40
30
20
10
0
4000
3000
2000
1000
0
5000
4000
3000
2000
1000
0
T
J
=125°C,VGE=15V
T
J
= 25°C,VGE=15V
T
J
=125°C,VGE=10V
Eon2 35A
Eon2 17.5A
Eoff 17.5A
Eoff 35A
Eoff70A
Eon2 35A
Eon2 70A
Eon2 17.5A
T
J
= 25 or 125°C,VGE =10V
T
J
= 25 or125°C,VGE = 10V
Eon2 70A
Eoff 70A
Eoff 35A
T
J
= 25°C,VGE=10V
VCE = 600V
RG = 5
L = 100 H
R
G
= 5
, L = 100H, V
CE = 600V
VCE = 600V
VGE = +15V
RG = 5
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 600V
VGE = +15V
TJ = 125°C
VCE = 600V
RG = 5
VCE = 600V
RG = 5
VCE = 600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
R
G
= 5
, L = 100H, V
CE = 600V
35
30
25
20
15
10
5
0
140
120
100
80
60
40
20
0
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT35GT120JU3 | 55 A, 1200 V, N-CHANNEL IGBT |
| APT4018BNR-BUTT | 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4018BNR-GULLWING | 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4016BNR-GULLWING | 31 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4016BNR-BUTT | 31 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT35GP120B2D2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.9V ID(cont):46Amps|Ultrafast IGBT Family |
| APT35GP120B2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT35GP120B2DQ2G | 功能描述:IGBT 1200V 96A 543W TMAX RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT35GP120BG | 功能描述:IGBT 1200V 96A 543W TO247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT35GP120J | 功能描述:IGBT 1200V 64A 284W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
發(fā)布緊急采購，3分鐘左右您將得到回復。