欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APT35GT120JU3
元件分類: IGBT 晶體管
英文描述: 55 A, 1200 V, N-CHANNEL IGBT
封裝: ISOTOP-4
文件頁數: 1/7頁
文件大小: 609K
代理商: APT35GT120JU3
APT35GT120JU3
A
PT
35G
T
120J
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
1- 7
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
IC1
TC = 25°C
55
IC2
Continuous Collector Current
TC = 80°C
35
ICM
Pulsed Collector Current
TC = 25°C
80
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
260
W
IFAV
Maximum Average Forward Current
Duty cycle=0.5
TC = 80°C
27
IFRMS
RMS Forward Current (Square wave, 50% duty)
34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C
A
E
G
VCES = 1200V
IC = 35A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP Buck chopper
Trench IGBT
A
C
G
E
相關PDF資料
PDF描述
APT4018BNR-BUTT 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4018BNR-GULLWING 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4016BNR-GULLWING 31 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4016BNR-BUTT 31 A, 400 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4018BNR 29 A, 400 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關代理商/技術參數
參數描述
APT35M42BFN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 350V V(BR)DSS | 95A I(D)
APT35M42DN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | CHIP
APT35M80AFN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 350V V(BR)DSS | 58A I(D)
APT35M80DN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | CHIP
APT36GA60B 功能描述:IGBT 600V 65A 290W TO-247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 8™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
主站蜘蛛池模板: 玛多县| 丁青县| 山西省| 天祝| 台州市| 蒙山县| 开化县| 迭部县| 昭平县| 锡林郭勒盟| 合江县| 兴安盟| 永平县| 昌邑市| 黄陵县| 兴和县| 沙坪坝区| 房山区| 铜鼓县| 宁德市| 寻甸| 丹江口市| 广河县| 天津市| 阜新| 迭部县| 黄平县| 双桥区| 尉氏县| 新安县| 扶绥县| 宜昌市| 南乐县| 兴和县| 崇州市| 祁门县| 永仁县| 安阳县| 红河县| 九台市| 个旧市|