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參數(shù)資料
| 型號(hào)： | APT35GT120JU3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 55 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 609K |
| 代理商： | APT35GT120JU3 |
APT35GT120JU3
A
PT
35G
T
120J
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
3- 7
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
2.0
2.5
IF = 60A
2.3
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
VR = 1200V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 1200V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
32
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
31
Tj = 25°C
370
trr
Reverse Recovery Time
Tj = 125°C
500
ns
Tj = 25°C
5
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
12
A
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/s
Tj = 125°C
3450
nC
trr
Reverse Recovery Time
220
ns
Qrr
Reverse Recovery Charge
4650
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 800V
di/dt =1000A/s
Tj = 125°C
37
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.48
RthJC
Junction to Case
Diode
1.1
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
Typical IGBT Performance Curve
0
10
20
30
40
50
60
0
10
203040
5060
I
C (A)
Fm
a
x,
O
p
er
at
ing
Fr
eque
nc
y(
kH
z)
V
CE=600V
D=50%
R
G=27
T
J=125°C
Operating Frequency vs Collector Current
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