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參數(shù)資料
型號: APTC60DDAM70CT1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 1/7頁
文件大小: 251K
代理商: APTC60DDAM70CT1G
APTC60DDAM70CT1G
APT
C
60DDAM
70CT
1G
Rev
0
Septem
ber
,2009
www.microsemi.com
1 – 7
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
160
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Dual boost chopper
Super Junction MOSFET
SiC chopper diode
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 39A @ Tc = 25°C
相關PDF資料
PDF描述
APTC60DDAM70T3 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DDAM70T3 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DSKM70CT1G 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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