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參數(shù)資料
| 型號(hào)： | APTM10DHM05 |
| 元件分類： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 302K |
| 代理商： | APTM10DHM05 |
APTM10DHM05
A
P
T
M
10D
H
M
05–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 125A
4.5
5
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
20
Coss
Output Capacitance
8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
2.9
nF
Qg
Total gate Charge
700
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 250A
360
nC
Td(on)
Turn-on Delay Time
80
Tr
Rise Time
165
Td(off)
Turn-off Delay Time
280
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 66V
ID = 250A
RG = 2.5
135
ns
Eon
Turn-on Switching Energy
1.1
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, RG =2.5
1.2
mJ
Eon
Turn-on Switching Energy
1.22
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, RG = 2.5
1.28
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
200
A
IF = 200A
1
IF = 400A
1.4
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
Tj = 125°C
110
ns
Tj = 25°C
400
Qrr
Reverse Recovery Charge
IF = 200A
VR = 133V
di/dt =600A/s
Tj = 125°C
1680
nC
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