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參數資料
| 型號： | APTM120DU29T |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 313K |
| 代理商： | APTM120DU29T |
APTM120DU29T
AP
T
M
12
0DU2
9T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
1 – 6
S
Q1
Q2
D2
S2
S1
G1
G2
D1
NTC1
NTC2
D2
NTC2
D2
S1
D1
NTC1
S2
G2
S2
G2
S
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
34
ID
Continuous Drain Current
Tc = 80°C
25
IDM
Pulsed Drain current
136
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
290
m
PD
Maximum Power Dissipation
Tc = 25°C
780
W
IAR
Avalanche current (repetitive and non repetitive)
22
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 1200V
RDSon = 290m max @ Tj = 25°C
ID = 34A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Dual Common Source
MOSFET Power Module
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| APTM120DU29T | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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