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參數資料
| 型號： | APTM120DU29T |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 313K |
| 代理商： | APTM120DU29T |
APTM120DU29T
AP
T
M
12
0DU2
9T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
3 – 6
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case
0.16
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To Heatsink
M5
4.7
N.m
Wt
Package Weight
160
g
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
68
k
B 25/85
T25 = 298.16 K
4080
K
=
T
B
R
T
1
exp
25
85
/
25
Package outline
T: Thermistor temperature
RT: Thermistor value at T
相關PDF資料 |
PDF描述 |
|---|---|
| APTM120DU29T | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM10T | 175 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM10T | 175 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20HM10F | 175 A, 200 V, 0.01 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20HM10F | 175 A, 200 V, 0.01 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTM120DU29TG | 功能描述:MOSFET MOD DUAL COMMON SRC SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM120H140FT1G | 功能描述:MOSFET MOD FULL BRIDGE 1200V SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM120H29F | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM120H29FG | 功能描述:PWR MODULE MOSFET 1200V 34A SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTM120H57FT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
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