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參數資料
| 型號： | APTM120DU29T |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 1200 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-12 |
| 文件頁數： | 6/6頁 |
| 文件大小： | 313K |
| 代理商： | APTM120DU29T |
APTM120DU29T
AP
T
M
12
0DU2
9T
–R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
180
10
20
30
40
50
60
70
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
10
20
30
40
50
60
70
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
10
20
30
40
50
60
70
ID, Drain Current (A)
Sw
it
ch
in
gEne
rgy
(m
J)
VDS=800V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
1
2
3
4
5
6
7
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=34A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
8
1216
202428
32
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=2.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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參數描述 |
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