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參數資料
| 型號： | APTM10DHM05 |
| 元件分類： | JFETs |
| 英文描述： | 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-8 |
| 文件頁數： | 6/6頁 |
| 文件大小： | 302K |
| 代理商： | APTM10DHM05 |
APTM10DHM05
A
P
T
M
10D
H
M
05–
R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
6 - 6
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
100
200
300
400
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=66V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
50
100
150
200
250
0
100
200
300
400
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=66V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
ID, Drain Current (A)
E
on
a
nd
E
of
f(m
J
)
VDS=66V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=66V
ID=200A
TJ=125°C
L=100H
Hard
switching
ZVS
ZCS
0
20
40
60
80
100
50
100
150
200
250
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=66V
D=50%
RG=2.5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相關代理商/技術參數 |
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| APTM10DHM05G | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP6 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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| APTM10DHM09TG | 功能描述:MOSFET MOD ASYMMETRIC BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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