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參數資料
| 型號： | AT-42010 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 52K |
| 代理商： | AT-42010 |
4-155
AT-42010 Absolute Maximum Ratings [1]
Absolute
Symbol
Parameter
Units
Maximum
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
600
Tj
Junction Temperature
°C
200
TSTG
Storage Temperature
°C
-65 to 200
Thermal Resistance[2,4]:
θ
jc = 150°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/
°C for
TC > 110°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ.
Max.
|S21E|
2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
10.5
11.5
f = 4.0 GHz
5.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 2.0 GHz
dBm
21.0
VCE = 8 V, IC = 35 mA
f= 4.0 GHz
20.5
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
1.9
f = 4.0 GHz
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
13.5
f = 4.0 GHz
10.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
—
30
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
A
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
A
2.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
0.28
Notes:
1. For this test, the emitter is grounded.
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