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參數資料
| 型號： | AT-42010 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 52K |
| 代理商： | AT-42010 |
4-156
AT-42010 Typical Performance, T
A = 25°C
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
GAIN
(dB)
0.1
0.5
0.3
1.0
3.0
6.0
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
24
20
16
12
8
4
G
1
dB
(dB)
P
1
dB
(dBm)
0
10
20
304050
P1dB
G1dB
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
IC (mA)
Figure 1. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
20
16
12
8
4
0
|S
21E
|2
GAIN
(dB)
0
10
20
304050
1.0 GHz
2.0 GHz
4.0 GHz
IC (mA)
Figure 3. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G
1
dB
(dB)
P
1
dB
(dBm)
0
10
20
304050
P1dB
G1dB
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
GAIN
(dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB)
0.5
2.0
1.0
3.0
4.0 5.0
GA
NFO
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AT42035 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
| AT-42035 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:Up to 6 GHz Medium Power Silicon Bipolar Transistor |
| AT-42035-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
| AT-42035G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-42035-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X |
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