- 您現在的位置：買賣IC網 > PDF目錄366588 > AT646S22 (POSEICO SPA) PHASE CONTROL THYRISTOR PDF資料下載
參數資料
| 型號： | AT646S22 |
| 廠商： | POSEICO SPA |
| 英文描述： | PHASE CONTROL THYRISTOR |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | AT646S22 |
PHASE CONTROL THYRISTOR
AT646
Repetitive voltage up to
Mean on-state current
Surge current
2200
V
1730
A
36
kA
TARGET SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
2200
V
V
RSM
Non-repetitive peak reverse voltage
125
2300
V
V
DRM
Repetitive peak off-state voltage
125
2200
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
70
mA
I
DRM
CONDUCTING
I
T (AV)
Repetitive peak off-state current
V=VDRM
125
70
mA
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
1730
A
I
T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
1495
A
I
TSM
Surge on-state current
sine wave, 10 ms
125
36
kA
I2 t
I2 t
without reverse voltage
6480 x1E3
A2s
V
T
On-state voltage
On-state current =
2900 A
125
1.6
V
V
T(TO)
Threshold voltage
125
0.90
V
r
T
On-state slope resistance
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
125
0.240
mohm
From 75% VDRM up to 2200 A, gate 10V 5ohm 125
200
A/μs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/μs
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 μs
25
3
μs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/μs linear up to 75% VDRM
250
μs
Q rr
Reverse recovery charge
di/dt=-20 A/μs, I= 1430 A
125
μC
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30μs
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
300
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 μs
150
W
P
G
Average gate power dissipation
MOUNTING
R
th(j-h)
Thermal impedance, DC
2
W
Junction to heatsink, double side cooled
21
°C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6
°C/kW
T
j
F
Operating junction temperature
Mounting force
Mass
-30 / 125
22.0 / 24.5
520
°C
kN
g
ORDERING INFORMATION : AT646 S 22
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
相關PDF資料 |
PDF描述 |
|---|---|
| AT655S28 | PHASE CONTROL THYRISTOR |
| AT655 | PHASE CONTROL THYRISTOR |
| AT671 | PHASE CONTROL THYRISTOR |
| AT671S45 | PHASE CONTROL THYRISTOR |
| AT681 | PHASE CONTROL THYRISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AT64L64K6SHC4M | 功能描述:512 MB DDR1 DUAL RANK UNBUFFERRE 制造商:atp electronics, inc. 系列:- 零件狀態:在售 存儲器類型:DDR SDRAM 存儲容量:512MB 封裝/外殼:200-SODIMM 標準包裝:50 |
| AT64L64M8SHB3MI | 制造商:ATP Electronics Inc 功能描述:IG MODULE 512MB DDR333 UNBUFFERED NON ECC SO-DIMM - Bulk |
| AT64L64M8SHB3S | 制造商:ATP Electronics Inc 功能描述:512MB DDR333 UNBUFFERED NON ECC SO-DIMM - Bulk |
| AT64L64M8SHC4S | 制造商:ATP Electronics Inc 功能描述:512MB DDR400 UNBUFFERED NON ECC MODULE - Bulk |
| AT64L64N8BHB3MI | 制造商:ATP Electronics Inc 功能描述:IG MODULE 512MB DDR333 UNBUFFERED NON ECC SO-DIMM - Bulk |
發布緊急采購，3分鐘左右您將得到回復。